Germanium wafers

DESO Technology Limited (Hong Kong) Germanium Wafers

DESO Germanium (Ge) wafers are offered in diameters of 2, 3, 4 and 6 inches.

Ge wafers are grown using VGF/LEC method. Lightly doped P and N type Ge wafers may be used for Hall effect experiments. Ge serves as a semicondutor. High-purity Germanium is doped with trivalent elements (e.g. indium, gallium, boron) to construct P-type Ge semicondutors; and doped with pentavalent elements (e.g. antimony, arsenic, phosphorus) to construct N-type Ge semiconductors. Germanium has excellent semiconductor properties including high electron mobility and mole mobility.